A model is presented for hybrid pseudospin valve and superconducting-ferromagnetic transistor memory cells enabling sub-nanosecond switching with sub-100 fJ energy per operation.
The I -V curve is described by the RCSJ model (Resistively and Capacitively Shunted Junction) 17
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Modeling the computer memory based on the ferromagnet/superconductor multilayers
A model is presented for hybrid pseudospin valve and superconducting-ferromagnetic transistor memory cells enabling sub-nanosecond switching with sub-100 fJ energy per operation.