A model is presented for hybrid pseudospin valve and superconducting-ferromagnetic transistor memory cells enabling sub-nanosecond switching with sub-100 fJ energy per operation.
0” “1” processes. (b) The bit line pulse magnitudes (Node2.Vt and Node4.Vt) are positive. Positive/negative signal of the odd pulses sho ws reading “0/1
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Modeling the computer memory based on the ferromagnet/superconductor multilayers
A model is presented for hybrid pseudospin valve and superconducting-ferromagnetic transistor memory cells enabling sub-nanosecond switching with sub-100 fJ energy per operation.