10 nm AlBScN thin films exhibit ferroelectric switching at 2.2 MV/cm in C-V tests and 4.6 MV/cm in PUND measurements with significantly reduced leakage and a breakdown-to-coercive field ratio of ~2.2.
Al₀.₆₈Sc₀.₃₂N/SiC -based metal -ferroelectric-semiconductor capacitors operating up to 1000 °C
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Neuromorphic computing using compute-in-memory, analog dynamics, and sparse brain-inspired communication offers a route to more energy-efficient AI beyond traditional CMOS scaling limits.
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Low-Field Ferroelectricity in 10 nm AlBScN Thin Films
10 nm AlBScN thin films exhibit ferroelectric switching at 2.2 MV/cm in C-V tests and 4.6 MV/cm in PUND measurements with significantly reduced leakage and a breakdown-to-coercive field ratio of ~2.2.
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Neuromorphic Computing for Low-Power Artificial Intelligence
Neuromorphic computing using compute-in-memory, analog dynamics, and sparse brain-inspired communication offers a route to more energy-efficient AI beyond traditional CMOS scaling limits.