Rotating FIB-SEM tomography to image porous GaN perpendicular to the film surface significantly mitigates the pore back effect, and new voxel-intensity metrics quantify this improvement.
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Improving feature resolution and pore back effect in focused ion beam tomography of porous GaN thin films
Rotating FIB-SEM tomography to image porous GaN perpendicular to the film surface significantly mitigates the pore back effect, and new voxel-intensity metrics quantify this improvement.