A modified boost converter applies accelerated stress to GaN HEMTs, showing logarithmic R_DS(on) rise consistent with existing models and validating phonon scattering energy at 70V and 100V.
Off-state degra- dation of AlGaN / GaN power HEMTs: Experimental demonstration of time-dependent drain-source breakdown
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A Modified Boost Converter Topology for Dynamic Characterization of Hot Carrier and Trap Generation in GaN HEMTs
A modified boost converter applies accelerated stress to GaN HEMTs, showing logarithmic R_DS(on) rise consistent with existing models and validating phonon scattering energy at 70V and 100V.