NO-annealed thermal oxides and RIE-plus-ALE etching reduce background noise in V_Si PL measurements inside 4H-SiC pin-diodes, delivering SNR improvements of 15 for near-surface and 50 for deeper emitters while preserving good diode blocking behavior.
Doping-Related Photoluminescence Spectroscopy in 4H -SiC: 13th European Conference on Silicon Carbide and Related Materials, 2020
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Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes
NO-annealed thermal oxides and RIE-plus-ALE etching reduce background noise in V_Si PL measurements inside 4H-SiC pin-diodes, delivering SNR improvements of 15 for near-surface and 50 for deeper emitters while preserving good diode blocking behavior.