High-dose-rate electron irradiation in STEM at room temperature preferentially forms boron-terminated tetravacancies in monolayer hBN, characterized by HAADF, EELS, and ptychography.
Engineeringsingle-atomdynamicswith electron irradiation
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Fabrication and characterization of boron-terminated tetravacancies in monolayer hBN using STEM, EELS and electron ptychography
High-dose-rate electron irradiation in STEM at room temperature preferentially forms boron-terminated tetravacancies in monolayer hBN, characterized by HAADF, EELS, and ptychography.