A MoSe2 monolayer placed within a few nanometers of an InGaN quantum well quenches its photoluminescence, shortens exciton lifetime, and reduces diffusion length, attributed to hole tunneling through the GaN barrier.
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Interlayer Coupling and Exciton Dynamics in 2D Hybrid Structures based on an InGaN Quantum Well coupled to a MoSe2 Monolayer
A MoSe2 monolayer placed within a few nanometers of an InGaN quantum well quenches its photoluminescence, shortens exciton lifetime, and reduces diffusion length, attributed to hole tunneling through the GaN barrier.