Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
arXiv:2503.15434
6 Pith papers cite this work. Polarity classification is still indexing.
6
Pith papers citing it
years
2026 6verdicts
UNVERDICTED 6representative citing papers
Conveyor-mode electron shuttling enables high-fidelity single-qubit rotations via EDSR and tunable two-qubit interactions via diabatic gates in semiconductor spin qubits.
Confinement modulation during shuttling enables dressed-state dynamical decoupling that mitigates both global and local magnetic/electric noise in hole-spin qubits.
A Tukey-window-based smooth velocity shuttling protocol reduces valley excitations and average spin infidelity in disordered Si/SiGe quantum dots via analytical design and statistical simulations.
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
A review summarizing spin qubit platforms, long-range coupling methods, and a proposal for topological linking toward scalable quantum information processing.
citing papers explorer
-
Spin Qubit Leapfrogging: Dynamics of shuttling electrons on top of another
Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
-
Spin qubit operations by conveyor-mode shuttling
Conveyor-mode electron shuttling enables high-fidelity single-qubit rotations via EDSR and tunable two-qubit interactions via diabatic gates in semiconductor spin qubits.
-
Suppressing spin qubit decoherence during shuttling via confinement modulation
Confinement modulation during shuttling enables dressed-state dynamical decoupling that mitigates both global and local magnetic/electric noise in hole-spin qubits.
-
Smooth velocity shuttling for suppressing valley excitations in disordered Si/SiGe quantum dots
A Tukey-window-based smooth velocity shuttling protocol reduces valley excitations and average spin infidelity in disordered Si/SiGe quantum dots via analytical design and statistical simulations.
-
Singlet-triplet oscillations in multivalley Si double quantum dots
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
-
Theory of spin qubits and the path to scalability
A review summarizing spin qubit platforms, long-range coupling methods, and a proposal for topological linking toward scalable quantum information processing.