Interface stoichiometry in GaAs/Ga2O3 heterostructures sets the band alignment type, with Ga-O-rich interfaces producing type-II alignment and ~3.1 eV valence band offset while As-rich interfaces produce type-I alignment with smaller offsets.
The Impact of Interfacial Chemistry on the Band Offset of GaAs/Ga2O3 Heterostructures,
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The impact of interfacial chemistry on the band offset of GaAs/Ga$_2$O$_3$ heterostructures
Interface stoichiometry in GaAs/Ga2O3 heterostructures sets the band alignment type, with Ga-O-rich interfaces producing type-II alignment and ~3.1 eV valence band offset while As-rich interfaces produce type-I alignment with smaller offsets.