Dark-field X-ray microscopy maps the elastic strain and lattice rotation around individual threading dislocations in HgCdTe/CdZnTe epilayers, revealing strain lobes of about 5e-5 and a 7-micron misorientation signature equal to the layer thickness.
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Spatially resolved elastic strain and lattice rotation at threading dislocations in HgCdTe/CdZnTe epilayers by dark-field X-ray microscopy
Dark-field X-ray microscopy maps the elastic strain and lattice rotation around individual threading dislocations in HgCdTe/CdZnTe epilayers, revealing strain lobes of about 5e-5 and a 7-micron misorientation signature equal to the layer thickness.