Stark tuning of T centres in silicon nanophotonic cavities with p-i-n diodes achieves 30 GHz shifts, resonance for 55% of on-chip emitters, tunable lifetime reduction, and a model predicting large entanglement-rate gains.
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2026 2verdicts
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Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.
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Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.