Bias voltage around 0.625 V reverses the sign of tunneling magnetoresistance in Fe3GaTe2/hBN/Fe3GaTe2 junctions at room temperature, reproducibly across devices.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Bias voltage around 0.625 V reverses the sign of tunneling magnetoresistance in Fe3GaTe2/hBN/Fe3GaTe2 junctions at room temperature, reproducibly across devices.