Binarized neural networks maintain near-full accuracy with 0.1% random weight bit errors, allowing ST-MRAM to operate without error correction and with about 2x lower programming energy.
Embedded stt-mram in 28-nm fdsoi logic process for industrial mcu/iot application,
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cs.ET 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction
Binarized neural networks maintain near-full accuracy with 0.1% random weight bit errors, allowing ST-MRAM to operate without error correction and with about 2x lower programming energy.