Derives a reversible Seebeck model from drift-diffusion plus Soret effect that recovers a lower-bound band term, keeps standard phonon-drag form, and matches n-doped silicon experiments better than ballistic alternatives in the near-equilibrium limit.
Seebeck effect in silicon,
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Revisiting Theoretical Modeling of Seebeck Coefficient of Semiconductors
Derives a reversible Seebeck model from drift-diffusion plus Soret effect that recovers a lower-bound band term, keeps standard phonon-drag form, and matches n-doped silicon experiments better than ballistic alternatives in the near-equilibrium limit.