Smallest defect-suppressed CsPbBr3 nanocrystals (5.6 nm) show the lowest hole activation energy (78 meV) and the highest ion migration barrier (370 meV) among three sizes.
Our measurements thus indicate a strong coupling of the electronic transport with ionic defect vacancies in CsPbBr3 NCs
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Tuning the Optoelectronics of Mixed-Semiconductors through the interplay of Quantum confinement and Stoichiometry Engineering
Smallest defect-suppressed CsPbBr3 nanocrystals (5.6 nm) show the lowest hole activation energy (78 meV) and the highest ion migration barrier (370 meV) among three sizes.