Polarized optical and photoemission measurements show that RuAs opens an electronic gap along the c axis near 250 K and along the b axis near 200 K, linking the two-step metal-insulator transition to anisotropic gap formation.
Pseudogap behavior of RuP probed by photoemission spectroscopy
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abstract
We have studied the electronic structure of RuP and related Ru pnictides using photoemission spectroscopy. Ru 3d core-level and valence-band spectra of RuP show that the Ru valence is +3 with t_{2g}^5 configuration. The photoemisson spectral weight near the Fermi level is moderately suppressed in the pseudogap phase of RuP, consistent with the pseudogap opening of 2\Delta/k_BT_c ~ 3 (gap size \Delta ~ 50 meV and transition temperature T_c ~ 330 K). The Ru 3d peak remains sharp in the pseudogap phase and the insulating phase of RuP, suggesting that the electronic orderings responsible for the phase transitions are different from the conventional charge density wave.
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cond-mat.str-el 1years
2019 1verdicts
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Optical and photoelectrical studies on anisotropic metal-insulator transition of RuAs
Polarized optical and photoemission measurements show that RuAs opens an electronic gap along the c axis near 250 K and along the b axis near 200 K, linking the two-step metal-insulator transition to anisotropic gap formation.