Experiments and computations show three preferred in-plane orientations for alpha-MoO3(0k0) on mica(001) due to interface energy minima from maximal Mo-K atom proximity enabling vdW attraction.
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Monolayer CrC2N4 exhibits a direct band gap at K/K' valleys with 51.9 meV valence-band spin splitting from SOC and strain-tunable gap and optical response from 1.987 to 1.421 eV.
A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.
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Atomistic mechanism and interface-structure-energetics of van der Waals epitaxy demonstrated by layered alpha-MoO3 growth on mica
Experiments and computations show three preferred in-plane orientations for alpha-MoO3(0k0) on mica(001) due to interface energy minima from maximal Mo-K atom proximity enabling vdW attraction.
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Robust Spin Splitting and Strain-Controlled Optical Response in Monolayer CrC2N4 for Valleytronic and Optoelectronic Applications
Monolayer CrC2N4 exhibits a direct band gap at K/K' valleys with 51.9 meV valence-band spin splitting from SOC and strain-tunable gap and optical response from 1.987 to 1.421 eV.
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A new method to probe conducting filaments in MoS$_2$-based memristors
A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.