In VO2 and V2O3 nanowires, defects control whether resistive switching is thermal or a non-thermal field-driven doping transition, enabling femtojoule-scale switching.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.str-el 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Non-Thermal Resistive Switching in Mott Insulators
In VO2 and V2O3 nanowires, defects control whether resistive switching is thermal or a non-thermal field-driven doping transition, enabling femtojoule-scale switching.