Epitaxial bilayer bismuth on EuO(111) forms a stabilized alpha-phase bismuthene with a robust 400 meV gap and boundary-localized states consistent with a room-temperature quantum spin Hall phase.
Ezawa, Higher-order topological insulators and semimetals on the breathing kagome and pyrochlore lat- tices, Phys
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Bismuth Films on EuO(111) as a Platform for Proximity-Induced Topological States
Epitaxial bilayer bismuth on EuO(111) forms a stabilized alpha-phase bismuthene with a robust 400 meV gap and boundary-localized states consistent with a room-temperature quantum spin Hall phase.