Cooling-induced strain in a triangular silicon FinFET changes hole spin qubit band mixing, g-factors, and Rabi frequencies, with a compressive strain scenario matching the experimental device best.
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Simulation of single hole spin qubit in strained triangular FinFET quantum devices
Cooling-induced strain in a triangular silicon FinFET changes hole spin qubit band mixing, g-factors, and Rabi frequencies, with a compressive strain scenario matching the experimental device best.