X-ray irradiation at 10^4 Gy reduces the threshold of a MALTA2 CMOS pixel sensor while leaving its noise unchanged, based on single-chip measurements without error bars.
Solans Sanchez, MALTA monolithic pixel sensors in TowerJazz 180 nm technology, NIM A 1057 (2023) 168787
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Characterization of CMOS sensor using X-ray irradiation
X-ray irradiation at 10^4 Gy reduces the threshold of a MALTA2 CMOS pixel sensor while leaving its noise unchanged, based on single-chip measurements without error bars.