A discrete SiGe BJT transimpedance front-end plus two LTC6431 stages gives a preamplifier board with sub-femtocoulomb equivalent noise charge and tens-of-picoseconds timing for LGAD, PIN, and 3D silicon detectors.
Fabrication and performance of AC-coupled LGADs
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abstract
Detectors that can simultaneously provide fine time and spatial resolution have attracted wide-spread interest for applications in several fields such as high-energy and nuclear physics as well as in low-energy electron detection, photon science, photonics and imaging. Low-Gain Avalanche Diodes (LGADs), being fabricated on thin silicon substrates and featuring a charge gain of up to 100, exhibit excellent timing performance. Since pads much larger than the substrate thickness are necessary to achieve a spatially uniform multiplication, a fine pad pixelation is difficult. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. At Brookhaven National Laboratory, we have designed and fabricated prototypes of AC-coupled LGAD sensors. The performance of small test structures with different particle beams from radioactive sources are shown.
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physics.ins-det 1years
2026 1verdicts
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A High Gain Preamplifier Board for Low Charge Semiconductor Detectors
A discrete SiGe BJT transimpedance front-end plus two LTC6431 stages gives a preamplifier board with sub-femtocoulomb equivalent noise charge and tens-of-picoseconds timing for LGAD, PIN, and 3D silicon detectors.