A nine-transistor current-mode bistable memory cell in 180 nm CMOS is presented with independent tuning of threshold, hysteresis, and gain, shown via schematic simulations for spike-based logic gates and recurrent neural units.
In-Memory Computing with Resistive Switching Devices
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Rigid single-molecule junctions show memristive hysteresis from extrinsic mechanical rearrangements at contacts, not internal molecular states.
Neuromorphic computing using compute-in-memory, analog dynamics, and sparse brain-inspired communication offers a route to more energy-efficient AI beyond traditional CMOS scaling limits.
citing papers explorer
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A Fully Tunable Ultra-Low Power Current-Mode Memory Cell in Standard CMOS Technology
A nine-transistor current-mode bistable memory cell in 180 nm CMOS is presented with independent tuning of threshold, hysteresis, and gain, shown via schematic simulations for spike-based logic gates and recurrent neural units.
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Memristive Switches in Rigid Conjugated Single-Molecule Junctions
Rigid single-molecule junctions show memristive hysteresis from extrinsic mechanical rearrangements at contacts, not internal molecular states.
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Neuromorphic Computing for Low-Power Artificial Intelligence
Neuromorphic computing using compute-in-memory, analog dynamics, and sparse brain-inspired communication offers a route to more energy-efficient AI beyond traditional CMOS scaling limits.
- Hardware-Software Co-Design of Scalable, Energy-Efficient Analog Recurrent Computations