Hole spin qubits can sense the geometry of electrostatic disorder from two-level fluctuators via g-tensor anisotropy, using a Berry-phase protocol estimated to achieve order-unity SNR in tens of microseconds, with optimal regimes identified by quantum Fisher information.
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A flexible optimization framework is introduced to suppress in-plane g-tensor components in SiGe-Ge-SiGe quantum wells by tuning silicon concentration, enabling gapless single-spin qubit encoding.
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Probing Electrostatic Disorder via g-Tensor Geometry
Hole spin qubits can sense the geometry of electrostatic disorder from two-level fluctuators via g-tensor anisotropy, using a Berry-phase protocol estimated to achieve order-unity SNR in tens of microseconds, with optimal regimes identified by quantum Fisher information.
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g-tensor Optimization in Ge/SiGe Quantum Dots
A flexible optimization framework is introduced to suppress in-plane g-tensor components in SiGe-Ge-SiGe quantum wells by tuning silicon concentration, enabling gapless single-spin qubit encoding.