Simulation study of EBL-free AlInN nanowire DUV LEDs reports higher IQE without droop up to 1500 A/cm2 and strong TM polarization versus AlGaN devices.
M-Plane GaN/InAlN multiple quantum wells in core–shell wire structure for UV emission
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.app-ph 1years
2019 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Design and characteristic study of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
Simulation study of EBL-free AlInN nanowire DUV LEDs reports higher IQE without droop up to 1500 A/cm2 and strong TM polarization versus AlGaN devices.