Wafer-scale 2-inch beta-Ga2O3 MOSFETs fabricated with >3 kV breakdown and reported uniformity in threshold voltage, current density, and breakdown across the wafer.
All -implanted lateral β-Ga2O3 MOSFET devices realized on semi - insulating (-201) β-Ga2O3 substrates,
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Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages
Wafer-scale 2-inch beta-Ga2O3 MOSFETs fabricated with >3 kV breakdown and reported uniformity in threshold voltage, current density, and breakdown across the wafer.