Sliding bilayer altermagnets host antiferromagnetic half-metallicity and Chern insulator phases via spin-dependent interlayer hopping in ferrovalley states, demonstrated in V2OSSe by first-principles calculations.
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Giant room-temperature third-order Hall effect observed in RuO2 thin films is correlated with altermagnetic order via quantum geometry.
A universal analytic formula for the TMR ratio in X-wave magnet junctions is derived, proportional to |J|/(N_X Γ) for small Γ, in contrast to the J²/Γ² dependence for ferromagnets.
DFT calculations show RuO2 undergoes transitions between nonmagnetic and altermagnetic ground states as a function of Hubbard U and strain that changes cell volume.
RuO2 exhibits a leading instability toward commensurate altermagnetic order at low temperatures in the stoichiometric non-magnetic phase according to RPA analysis of susceptibility.
Ultra-clean RuO2 crystals exhibit weakly correlated 3D Fermi-liquid behavior with susceptibility increasing with temperature due to lattice-expansion effects on the band structure.
Ultra-clean RuO2 single crystals grown via necked-tube sublimation transport achieve RRR up to 1200 with residual resistivity around 30 nOhm cm and no detected magnetic order.
citing papers explorer
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Intrinsic antiferromagnetic half-metal and topological phases from the ferrovalley states of the sliding bilayer altermagnets
Sliding bilayer altermagnets host antiferromagnetic half-metallicity and Chern insulator phases via spin-dependent interlayer hopping in ferrovalley states, demonstrated in V2OSSe by first-principles calculations.
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Giant Room-Temperature Third-Order Electrical Transport in a Thin-Film Altermagnet Candidate
Giant room-temperature third-order Hall effect observed in RuO2 thin films is correlated with altermagnetic order via quantum geometry.
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Tunneling magnetoresistance in a junction made of $X$-wave magnets with $X=p,d,f,g,i$
A universal analytic formula for the TMR ratio in X-wave magnet junctions is derived, proportional to |J|/(N_X Γ) for small Γ, in contrast to the J²/Γ² dependence for ferromagnets.
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Nonmagnetic-magnetic Transitions in Rutile RuO2
DFT calculations show RuO2 undergoes transitions between nonmagnetic and altermagnetic ground states as a function of Hubbard U and strain that changes cell volume.
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Incipient magnetic instability in RuO$_2$ with random phase approximation
RuO2 exhibits a leading instability toward commensurate altermagnetic order at low temperatures in the stoichiometric non-magnetic phase according to RPA analysis of susceptibility.
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Fermi-liquid behavior and characteristic temperature-dependent susceptibility in clean RuO$_2$ crystal
Ultra-clean RuO2 crystals exhibit weakly correlated 3D Fermi-liquid behavior with susceptibility increasing with temperature due to lattice-expansion effects on the band structure.
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Growth of ultra-clean single crystals of RuO2
Ultra-clean RuO2 single crystals grown via necked-tube sublimation transport achieve RRR up to 1200 with residual resistivity around 30 nOhm cm and no detected magnetic order.