A physics-based compact model describes drain current variance in solution-gated monolayer graphene FETs by integrating local carrier-number and Coulomb-scattering fluctuations along the channel.
Wafer-Scale Statistical Analysis of Graphene Field -Effect Transistors—Part II: Analysis of Device Properties,
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Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
A physics-based compact model describes drain current variance in solution-gated monolayer graphene FETs by integrating local carrier-number and Coulomb-scattering fluctuations along the channel.