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Erratum: Electronics based on two-dimensional materials

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Correction Crossref 1 open · 1 total · 0 disputed
DOI
10.1038/nnano.2014.207
Notice DOI
10.1038/nnano.2014.283
Event date
2014-12-03
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01One-hop citing occurrences

Correction Open
Chemical Treatment-Induced Indirect-to-Direct Bandgap Transition in MoS2: Impact on Optical Properties

ref [4] · 2507.16574 · notice #8795 · dispute

Raw extraction · citation context

J., Marks, T. J. & Hersam, M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano vol. 8 1102-1120 Preprint at https://doi.org/10.1021/nn500064s (2014). 4. Fiori, G. et al. Electronics based on two-dimensional materials. Nature Nanotechnology vol. 9 768-779 Preprint at https://doi.org/10.1038/nnano.2014.207 (2014). 5. Kuş, E. et al. A Dual-Channel MoS2-Based Selective Gas Sensor for Volatile Organic Compounds. Nanomaterials 14, (2024). 6. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat Nanotechnol 6, 147-150 (2011). 7. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M.

Parser render (TeX stripped for reading; raw above is the evidence)

J., Marks, T. J. & Hersam, M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano vol. 8 1102-1120 Preprint at https://doi.org/10.1021/nn500064s (2014). 4. Fiori, G. et al. Electronics based on two-dimensional materials. Nature Nanotechnology vol. 9 768-779 Preprint at https://doi.org/10.1038/nnano.2014.207 (2014). 5. Kuş, E. et al. A Dual-Channel MoS2-Based Selective Gas Sensor for Volatile Organic Compounds. Nanomaterials 14, (2024). 6. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat Nanotechnol 6, 147-150 (2011). 7. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M

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