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PAMBE growth of GaN nanowires on metallic ZrN buffers -- a critical impact of ZrN layer thickness on the growth temperature
ref [19] · 2506.11754 · notice #8817 · dispute
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G. Calabrese, P. Corfdir, G. Gao, C. Pfüller, A. Trampert, O. Brandt, L. Geelhaar, S. Fernán dez-Garrido, Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil, Appl. Phys. Lett. 108 (2016) 202101. https://doi.org/10.1063/1.4950707