Citation notice #8817 · 2026-08-07 06:18:45.691408+00:00
PAMBE growth of GaN nanowires on metallic ZrN buffers -- a critical impact of ZrN layer thickness on the growth temperature
Correction
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cites Calabrese, P, which carries a correction notice dated 2017-11-20. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.
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01Evidence
Raw extraction · bibliography line · bibliography index 19
G. Calabrese, P. Corfdir, G. Gao, C. Pfüller, A. Trampert, O. Brandt, L. Geelhaar, S. Fernán dez-Garrido, Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil, Appl. Phys. Lett. 108 (2016) 202101. https://doi.org/10.1063/1.4950707
02Event
- Type
- Correction
- Source
- Crossref
- Original DOI
- 10.1063/1.4950707
- Notice DOI
- 10.1063/1.5011853
- Date
- 2017-11-20
- Title
- Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. <b>108</b> , 202101 (2016)]
- Reasons
- ['Correction']
- Work
- Calabrese, P (2016)
03Dispute this notice
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