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Reference changes · DOI

De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F

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Correction Crossref 1 open · 1 total · 0 disputed
DOI
10.1063/5.0225361
Notice DOI
10.1063/5.0255876
Event date
2025-02-04
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01One-hop citing occurrences

Correction Open
Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics

ref [1] · 2412.16221 · notice #9765 · dispute

Raw extraction · bibliography line

(1) Battisti, S.; Simoni, G. De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F. Extremely Weak Sub-Kelvin Electron–Phonon Coupling in InAs on Insulator. Appl. Phys. Lett. 2024, 125 (20). https://doi.org/10.1063/5.0225361. (2) Arif, O.; Canal, L.; Ferrari, E.; Ferrari, C.; Lazzarini, L.; Nasi, L.; Paghi, A.; Heun, S.; Sorba, L. Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells. Nanomaterials 2024, 14 (7),

Parser render (TeX stripped for reading; raw above is the evidence)

(1) Battisti, S.; Simoni, G. De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F. Extremely Weak Sub-Kelvin Electron–Phonon Coupling in InAs on Insulator. Appl. Phys. Lett. 2024, 125 (20). https://doi.org/10.1063/5.0225361. (2) Arif, O.; Canal, L.; Ferrari, E.; Ferrari, C.; Lazzarini, L.; Nasi, L.; Paghi, A.; Heun, S.; Sorba, L. Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells. Nanomaterials 2024, 14 (7)

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