Citation notice #9765 · 2026-08-11 18:18:07.028546+00:00

Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics

Correction Crossref Open

cites De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F, which carries a correction notice dated 2025-02-04. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.

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01Evidence

Raw extraction · bibliography line · bibliography index 1

(1) Battisti, S.; Simoni, G. De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F. Extremely Weak Sub-Kelvin Electron–Phonon Coupling in InAs on Insulator. Appl. Phys. Lett. 2024, 125 (20). https://doi.org/10.1063/5.0225361. (2) Arif, O.; Canal, L.; Ferrari, E.; Ferrari, C.; Lazzarini, L.; Nasi, L.; Paghi, A.; Heun, S.; Sorba, L. Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells. Nanomaterials 2024, 14 (7),

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(1) Battisti, S.; Simoni, G. De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F. Extremely Weak Sub-Kelvin Electron–Phonon Coupling in InAs on Insulator. Appl. Phys. Lett. 2024, 125 (20). https://doi.org/10.1063/5.0225361. (2) Arif, O.; Canal, L.; Ferrari, E.; Ferrari, C.; Lazzarini, L.; Nasi, L.; Paghi, A.; Heun, S.; Sorba, L. Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells. Nanomaterials 2024, 14 (7)

02Event

Type: Correction
Source: Crossref
Original DOI: 10.1063/5.0225361
Notice DOI: 10.1063/5.0255876
Date: 2025-02-04
Title: Publisher's Note: “Extremely weak sub-kelvin electron–phonon coupling in InAs on Insulator” [Appl. Phys. Lett. <b>125</b> , 202601 (2024)]
Reasons: ['Correction']
Work: De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F (2024)

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