Recoverable Identifier

arXiv:2605.03765 · detector doi_compliance · incontrovertible · 2026-05-19 15:03:04.250350+00:00

advisory doi_compliance recoverable_identifier

DOI in the printed bibliography is fragmented by whitespace or line breaks. A longer candidate (10.35848/1882-0786/ada86b5) was visible in the surrounding text but could not be confirmed against doi.org as printed.

Paper page Integrity report arXiv Try DOI

Evidence text

https://doi.org/10.35848/1882- 0786/ada86b 5 C. Elias et al., "ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate," physica status solidi (a), p. 2400588,

Evidence payload

{
  "printed_excerpt": "https://doi.org/10.35848/1882- 0786/ada86b 5 C. Elias et al., \"ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate,\" physica status solidi (a), p. 2400588,",
  "reconstructed_doi": "10.35848/1882-0786/ada86b5",
  "ref_index": 4,
  "resolved_title": null,
  "verdict_class": "incontrovertible"
}