Citation notice #4451 · 2026-07-11 03:19:07.367578+00:00
Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
Correction
Crossref
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cites Laturia , author M, which carries a correction notice dated 2020-08-18. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.
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01Evidence
Raw extraction · bibliography line · bibliography index 47
A. Laturia, M. L. Van de Put, W. G. Vandenberghe, Dielectric properties of hexagonal boron nitrideandtransitionmetaldichalcogenides:frommonolayertobulk.npj2DMater.Appl.2(1) (2018), doi:10.1038/s41699-018-0050-x
02Event
- Type
- Correction
- Source
- Crossref
- Original DOI
- 10.1038/s41699-018-0050-x
- Notice DOI
- 10.1038/s41699-020-00163-3
- Date
- 2020-08-18
- Title
- Author Correction: Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk
- Reasons
- ['Correction']
- Work
- Laturia , author M (2018) npj 2D Materials and Applications
03Dispute this notice
If this citation does not depend on the flagged claim, or the event is wrong, say so. Disputes are public. For a signed challenge against the paper itself, use the formal challenge form.