Citation notice #6884 · 2026-07-11 03:19:18.425668+00:00

Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices

Correction Crossref Open

cites Ohtomo \ and\ author H, which carries a correction notice dated 2006-05-03. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.

This is not a judgment on the citing paper.

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01Evidence

Raw extraction · bibliography line · bibliography index 24

author author A. Ohtomo \ and\ author H. Hwang ,\ https://doi.org/10.1038/nature02308 journal journal Nature \ volume 427 ,\ pages 423 ( year 2004 ) NoStop

Parser render (TeX stripped for reading; raw above is the evidence)

author author A. Ohtomo and author H. Hwang, https://doi.org/10.1038/nature02308 journal journal Nature volume 427, pages 423 ( year 2004 )

02Event

Type: Correction
Source: Crossref
Original DOI: 10.1038/nature02308
Notice DOI: 10.1038/nature04773
Date: 2006-05-03
Title: Erratum: Corrigendum: A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
Reasons: ['Erratum']
Work: Ohtomo \ and\ author H (2004)

Schema constants (for re-runners): correction · crossref

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