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Ohtomo \ and\ author H
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- Event date
- 2006-05-03
01One-hop citing occurrences
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Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices
ref [24] ·
2512.11176
· notice #6884
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author author A. Ohtomo \ and\ author H. Hwang ,\ https://doi.org/10.1038/nature02308 journal journal Nature \ volume 427 ,\ pages 423 ( year 2004 ) NoStop
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author author A. Ohtomo and author H. Hwang, https://doi.org/10.1038/nature02308 journal journal Nature volume 427, pages 423 ( year 2004 )
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Mechanical detection of sub-band mobilities of two-dimensional electron gas on reduced SrTiO$_3$(001) surface
ref [13] ·
2605.12101
· notice #6883
· dispute
Raw extraction · citation context
toE 1,E 2, andE 3 energy in gap states. The heavy-electron Γ 1 band exhibits lower mobility values as compared to the lighter Γ 2, Γ3. The extracted values are summarized in Table 1 and range from 2500-4800cm 2V −1s−1, consistent with previously reported high-mobility values of an electron gas confined at the LaAlO3/SrTiO3 interface at low temperatures [13]. We will make one remark before closing. A tiny discontinuity is observed aroundB=±0.43T for the heavy Γ 1 sub-band (Figure 4a), accompanied to slight increase of mobility (µ= eτ m∗ ) for|B|>0.43T. Within the single relax- ation time approximation, this observation implies a reduced scattering rate 1/τ. It is possibly due to the heavy character ofd xz/yz band, which exhibits