arxiv: 0801.1354 · v1 · submitted 2008-01-09 · ❄️ cond-mat.str-el · cond-mat.mtrl-sci

Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Rongwei Hu , K. J. Thomas , Y. Lee , T. Vogt , E. S. Choi , V. F. Mitrovic , R. P. Hermann , F. Grandjean

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P. C. Canfield J. W. Kim A. I. Goldman C. Petrovic

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classification ❄️ cond-mat.str-el cond-mat.mtrl-sci

keywords magneticcolossalmagnetoresistancenearlypositivesemiconductorcontributiondiscuss

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We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.

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Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

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