pith. sign in

arxiv: 0804.3625 · v1 · submitted 2008-04-23 · ❄️ cond-mat.str-el · cond-mat.mtrl-sci

Giant Carrier Mobility in Single Crystals of FeSb2

classification ❄️ cond-mat.str-el cond-mat.mtrl-sci
keywords mobilitycarriercrystalsfesb2giantsingleapplicationsband
0
0 comments X
read the original abstract

We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8 K, and are ~10^2 cm^2/Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.