InAs Nanowire MOS Capacitors
classification
❄️ cond-mat.mtrl-sci
cond-mat.other
keywords
nanowirescapacitorsinasarrayscapacitance-voltagecapacitorcarriercharacterization
read the original abstract
We present a capacitance-voltage study for arrays of vertical InAs nanowires. MOS capacitors are obtained by insulating the nanowires with a conformal 10nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.
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