Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers

Konstantin V. Emtsev , Aaron Bostwick , Karsten Horn , Johannes Jobst , Gary L. Kellogg , Lothar Ley , Jessica L. McChesney , Taisuke Ohta

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Sergey A. Reshanov Eli Rotenberg Andreas K. Schmid Daniel Waldmann Heiko B. Weber Thomas Seyller

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classification ❄️ cond-mat.mtrl-sci

keywords graphenefilmsannealingaroundatmosphereatmosphericbasiscarrier

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We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.

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Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers

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