pith. sign in

arxiv: 0810.4081 · v2 · pith:PFWXP4APnew · submitted 2008-10-22 · ❄️ cond-mat.str-el · cond-mat.mes-hall

Itinerant Ferromagnetism in the electronic localization limit

classification ❄️ cond-mat.str-el cond-mat.mes-hall
keywords ferromagnetismfilmscriticalelectronicitinerantlocalizationmeasurementsomega
0
0 comments X
read the original abstract

We present Hall effect, $R_{xy}(H)$, and magnetoresistance, $R_{xx}(H)$, measurements of ultrathin films of Ni, Co and Fe with thicknesses varying between 0.2-8 nm and resistances between 1 M$\Omega$ - 100 $\Omega.$ Both measurements show that films having resistance above a critical value, $R_{C}$, (thickness below a critical value, $d_{C}$) show no signs for ferromagnetism. Ferromagnetism appears only for films with $R<R_{C}$, where $R_{C}$ is material dependent. We raise the possibility that the reason for the absence of spontaneous magnetization is suppression of itinerant ferromagnetism by electronic disorder in the strong localization regime.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.