High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

A. Posadas; C. H. Ahn; J. Zhu; K. Zou; X. Hong

arxiv: 0810.5339 · v1 · submitted 2008-10-29 · ❄️ cond-mat.mes-hall

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

X. Hong , A. Posadas , K. Zou , C. H. Ahn , J. Zhu This is my paper

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Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5. rho(V_g) and R_H(V_g) fitting inside the band overlap regime. 6. The deformation potential of longitudinal acoustic (LA) phonons in graphene. 7. Resistivity and Hall measurements of a SiO_2-gated FLG.

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High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

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