Fabrication and characterization of pseudo-spin-MOSFET

Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for semiconductor channel is established. However, this is not so easy challenge owing to ferromagnet/semiconductor-interface-related several problems. In this paper, we demonstrate pseudo-spin-MOSFET (PS-MOSFET) architecture that is a new circuit approach using an ordinary MOSFET and magnetic tunnel junction (MTJ) to reproduce the functions of spin transistors.