arxiv: 1006.2644 · v1 · pith:RB6BTEUSnew · submitted 2010-06-14 · ❄️ cond-mat.mtrl-sci

Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

A. Casiraghi , A. W. Rushforth , M. Wang , N. R. S Farley , P. Wadley , J. L. Hall , C. R. Staddon , K. W. Edmonds

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R. P. Campion C. T. Foxon B. L. Gallagher

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keywords annealingmagneticanisotropyaxiseasyperpendicularplanesamples

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We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase of the carrier density, as a result of annealing, is found to be the primary reason for the change in magnetic anisotropy, in qualitative agreement with theoretical predictions.

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Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

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