A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio
classification
❄️ cond-mat.mes-hall
keywords
transistorchannelgrapheneioffratioarchitecturebackbeam
read the original abstract
A novel graphene transistor architecture is reported. The transistor has a U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10^5.
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