Interface-induced d-wave pairing

2); (2) Max Planck Institute for Solid State Research; (3) University of Florida; C. Stephanos (1); Gainesville; Germany; J. Mannhart (1; P. J. Hirschfeld (3) ((1) University of Augsburg; Stuttgart; T. Kopp (1)

arxiv: 1108.1942 · v1 · pith:MF5OBC42new · submitted 2011-08-09 · ❄️ cond-mat.supr-con

Interface-induced d-wave pairing

C. Stephanos (1) , T. Kopp (1) , J. Mannhart (1 , 2) , P. J. Hirschfeld (3) ((1) University of Augsburg , Germany , (2) Max Planck Institute for Solid State Research , Stuttgart

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(3) University of Florida Gainesville USA)

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classification ❄️ cond-mat.supr-con

keywords d-wavedipolarexcitationsinterface-inducedpairingsuperconductingtransitionchannel

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We discuss a scenario for interface-induced superconductivity involving pairing by dipolar excitations proximate to a two-dimensional electron system controlled by a transverse electric field. If the interface consists of transition metal oxide materials, the repulsive on-site Coulomb interaction is typically strong and a superconducting state is formed via exchange of non-local dipolar excitations in the d-wave channel. Perspectives to enhance the superconducting transition temperature are discussed.

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Interface-induced d-wave pairing

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