Defect evolution and interplay in n-type InN

Christian Rauch (1) , Filip Tuomisto (1) , Arantxa Vilalta-Clemente (2) , Bertrand Lacroix (2) , Pierre Ruterana (2) , Simon Kraeusel (3) , Ben Hourahine (3) , William J. Schaff (4) ((1) Department of Applied Physics

show 12 more authors

Aalto University Finland (2) CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN France (3) Department of Physics SUPA Strathclyde University UK (4) Department of Electrical Computer Engineering Cornell University USA)

Authors on Pith no claims yet

classification ❄️ cond-mat.mtrl-sci

keywords concentrationsdefectsinterplayn-typesi-dopedadditionalannihilationarea

0 comments

read the original abstract

The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, V_In-V_N complexes are the dominant III-sublattice related vacancy defects. Enhanced formation of larger V_In-mV_N clusters is observed at the interface, which speaks for high concentrations of additional V_N in the near-interface region and coincides with an increase in the density of screw and edge type dislocations in that area.

This paper has not been read by Pith yet.

Defect evolution and interplay in n-type InN

discussion (0)