Self-compensation in highly n-type InN

C. Rauch (1) , F. Tuomisto (1) , P. D. C. King (2) , T. D. Veal (3) , H. Lu (4) , W. J. Schaff (4) ((1) Department of Applied Physics , Aalto University , Finland

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(2) School of Physics Astronomy University of St Andrews UK (3) Stephenson Institute for Renewable Energy Department of Physics University of Liverpool (4) Department of Electrical Computer Engineering Cornell University USA)

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classification ❄️ cond-mat.mtrl-sci cond-mat.other

keywords n-typehighlyacceptor-typecentersdefectsscatteringself-compensationadditional

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Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.

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Self-compensation in highly n-type InN

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